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PHOTOMULTIPLIER TUBES
R2693, R2693P
Transmission Mode Low Noise Bialkali Photocathode 28 mm (1-1/8 inch) Diameter, Side-on Type
FEATURES
GLow Dark Current GLow Dark Counts (R2693P) GWide Photocathode GExcellent Spatial Uniformity GFast Time Response
APPLICATIONS
GFluorescence Detector GChemiluminescence Detector GLight Scattering Detector
SPECIFICATIONS
GENERAL
Parameter Description/Value 185 to 650 Spectral Response 375 Wavelength of Maximum Response MateriaI Low noise bialkali Photocathode Minimum Effective Area 16 (H) x 18 (W) UV glass Window Material Structure Circular-cage Dynode Number of Stages 9 1.2 Direct Interelectrode Anode to Last Dynode Anode to All Other Electrodes 3.4 Capacitances Base 11-pin base JEDEC No. B11-88 Operating Ambient Temperature -30 to +50 Storage Temperature -30 to +50 SuitabIe Socket E678-11A (Sold Separately) E717-63 (Sold Separately) SuitabIe Socket Assembly E717-74 (Sold Separately) Unit nm nm -- mm -- -- -- pF pF -- C C -- -- --
Figure 1: Electron Trajectories
3rd DYNODE 1st DYNODE FOCUSING ELECTRODES 2nd DYNODE
GLASS BULB PHOTOCATHODE PHOTOELECTRONS
LIGHT
TPMSC0003EC
Figure 2: Typical Spatial Uniformity
GX-Axis
100 90 80
GY-Axis
100 90 80
RELATIVE OUTPUT (%)
70 60 50 40 30 20
RELATIVE OUTPUT (%)
-10 CATHODE ANODE 5 0 5 10 15
70 60 50 40 30 20 10 0 -15 -10 CATHODE ANODE 5 0 5 10 15
Y
X
SPOTSIZE: 1 mm SUPPLY VOLTAGE: 1000 V WAVELENGTH: 400 nm
10 0 -15
POSITION (mm)
POSITION (mm)
TPMSB0066EB
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2007 Hamamatsu Photonics K.K.
PHOTOMULTIPLIER TUBES R2693, R2693P
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter Between Anode and Cathode Supply Voltage Between Anode and Last Dynode Average Anode Current A Value 1250 250 0.1 Unit V V mA
CHARACTERISTlCS (at 25 C)
Parameter Quantum Efficiency at 375 nm Luminous B Radiant at 375 nm (Peak) Blue Sensitivity Index C Luminous D Radiant at 375 nm (Peak) R2693 for General Purpose Min. Typ. Max. -- -- 20.5 -- 30 50 -- -- 62 -- -- 7.0 -- 100 300 -- -- 3.7 x 105 -- -- 6 x 106 5.0 -- 0.5 -- -- -- -- -- -- -- -- 8.6 x 10-17 -- -- 1.2 -- -- 18 -- -- 1.0 -- -- 0.5 -- -- 1.0 R2693P for Photon Counting Min. Typ. Max. -- 20.5 -- 30 50 -- -- 62 -- -- 7.0 -- 100 300 -- -- 3.7 x 105 -- -- -- 6 x 106 -- 2.0 0.1 -- 50 20 -- 50 10 -- -- 3.9 x 10-17 -- -- 1.2 -- -- 18 -- -- 1.0 -- -- 0.5 -- -- 1.0 Unit % A/lm mA/W A/lm-b A/lm A/W -- nA s-1 s-1 W ns ns ns % %
Cathode Sensitivity
Anode Sensitivity
Gain D Anode Dark Current E (After 30 min Storage in Darkness) Pulse Hight Distribution F Anode Dark Counts at Plateau Voltage G ENI (Equivalent Noise Input) H Anode Pulse Rise Time J D Time Response Electron Transit Time K Transit Time Spread (FWHM) L M Current Hysteresis Anode Current Stability Voltage Hysteresis
NOTES
A: Averaged over any interval of 30 seconds maximum. B: The light source is a tungsten filament lamp operated at a distribution temperature of 2856 K. Supply voltage is 100 V between the cathode and all other electrodes connected together as anode. C: The value is cathode output current when a blue filter (Corning CS 5-58 polished to 1/2 stock thickness) is interposed between the light source and the tube under the same condition as Note B. D: Measured with the same light source as Note B and with the voltage distribution ratio shown in Table 1 below. Table 1: Voltage Distribution Ratio Electrodes K Dy1 Dy2 Dy3 Ratio 1 1 1 1 Pulse Height Distribution Electrodes K Dy1 Dy2 Dy3 Ratio 1 1 1 1 Plateau Electrodes Ratio
****
*****
Dy7 Dy8 Dy9 P 1 1 1
J: The rise time is the time for the output pulse to rise from 10 % to 90 % of the peak amplitude when the entire photocathode is illuminated by a delta function light pulse. K: The electron transit time is the interval between the arrival of delta function light pulse at the entrance window of the tube and the time when the anode output reaches the peak amplitube. In measurement, the whole photocathode is illuminated. L: Also called transit time jitter. This is the fluctuation in electron transit time between individual pulses in the single photoelectron mode, and may be defined as the FWHM of the frequency distribution of electron transit times. M: Hysteresis is temporary instability in anode current after light and voltage are applied. Hysteresis = lmax. li
ANODE CURRENT
SuppIy Voltage: 1000 V, K: Cathode, Dy: Dynode, P: Anode
**** ****
lmin.
x 100 (%)
Dy7 Dy8 Dy9 P * 1 1 1
li
SuppIy Voltage: Note F, K: Cathode, Dy: Dynode, P: Anode
l max. l min. TIME
K
Dy1 Dy2 Dy3 1 1 1 1
****
*****
Dy7 Dy8 Dy9 P 1 2 1
0
5
6
7 (minutes)
TPMSB0002EA
SuppIy Voltage: Plateau Voltage, K: Cathode, Dy: Dynode, P: Anode
E: Measured with the same supply voltage and voltage distribution ratio as Note D after removal of light. F: Measured at the voltage producing the gain of 1 x 106 G: Plateau voltage at the test up in HPK H: ENI is an indication of the photon-limited signal-to-noise ratio. It refers to the amount of light in watts to produce a signal-to-noise ratio of unity in the output of a photomultiplier tube. ENI = where 2q.ldb.G.f
(1)Current Hysteresis The tube is operated at 750 V with an anode current of 1 A for 5 minutes. The light is then removed from the tube for a minute. The tube is then re-illuminated by the previous light level for a minute to measure the variation. (2)Voltage Hysteresis The tube is operated at 300 V with an anode current of 0.1 A for 5 minutes. The light is then removed from the tube and the supply voltage is quickly increased to 800 V. After a minute, the supply voltage is then reduced to the previous value and the tube is re-illuminated for a minute to measure the variation.
S q = Electronic charge (1.60 x 10-19 coulomb). ldb = Anode dark current (after 30 minutes storage) in amperes. G = Gain. f = Bandwidth of the system in hertz. 1 hertz is used. S = Anode radiant sensitivity in amperes per watt at the wavelength of peak response.
Figure 3: Typical Spectral Response
100
TPMSB0060EA
Figure 4: Typical Time Response
200
TPMSB0061EA
CATHODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%)
CATHODE RADIANT SENSITIVITY
100 80 60 40
10 QUANTUM EFFICIENCY
TRAN
TIME (ns)
20
SIT TIM E
1
10 8 6
0.1
4
2
RISE
TIME
1000 1500
0.01
1
200
400
600
800
300
500
700
WAVELENGTH (nm)
SUPPLY VOLTAGE (V)
Figure 5: Typical Gain and Anode Dark Current (R2693)
108
TPMSB0062EA
Figure 6: Typical Single Photoelectron Pulse Height Distribution (R2693P)
1.0
TPMSB0063EA
10-5
107
10-6
FULL SCALE (SIGNAL+DARK): 1 x 104 FULL SCALE (DARK) : 1 x 103
0.8 SIGNAL+DARK
106
10-7
ANODE DARK CURRENT (A)
COUNTS PER CHANNEL
0.6
105
G
AI
N
10-8
GAIN
0.4
WAVELENGTH OF INCIDENT LIGHT : 400 nm : 1000 V SUPPLY VOLTAGE SIGNAL+DARK COUNTS : 5364 s-1 : 15 s-1 DARK COUNTS AMBIENT TEMPERATURE : +25
C
U
R
R
104
EN
T
10-9
AN
O
D
E
103
AR
0.2
K
10-10
D
DARK
102
10-11
0 0 200 400 600 800 1000
101 300
400
500
600
800
1000
10-12 1300
CHANNEL NUMBER (ch)
DISCRIMINATION LEVEL
SUPPLY VOLTAGE (V)
Figure 7: Typical Temperature Coefficient of Anode Sensitivity
+1.2
TPMSB0064EA
Figure 8: Typical Temperature Characteristics of Dark Current (R2693) (at 1000 V, after 30 min storage)
100
TPMSB0065EB
TEMPERATURE COEFFICIENT (%/C)
+0.8
ANODE DARK CURRENT (nA)
10
+0.4
0
1
-0.4
0.1
-0.8
-1.2 200
0.01
300
400
500
600
700
0
20
40
60
80
100
WAVELENGTH (nm)
TEMPERATURE (C)
PHOTOMULTIPLIER TUBES R2693, R2693P
Figure 9: Dimensional Outline and Basing Diagram (Unit: mm)
29.0 1.7 18 MIN. PHOTOCATHODE DY6 6
Figure 10: Socket (Unit: mm) Sold Separately
E678-11A
49 38
DY5 16 MIN. DY4 4 76 MAX. DY3 3 90 MAX. DY2 2
5
7
DY7 8 DY8
3.5 5 29 18 4
9 DY9 10 1 11 K P
49.0 2.5
DY1
DIRECTION OF LIGHT
32.2 0.5 11 PIN BASE JEDEC No. B11-88 HA COATING
TPMSA0007ED
33
TACCA0064EA
Figure 11: D Type Socket Assembly (Unit: mm)
E717-63
Sold Separately
E717-74
HOUSING (INSULATOR)
5 33.0 0.3 3.5
PMT P
SOCKET PIN No. 10
R10 DY9 9 R9 DY8 DY7 8 R8 7 R7
C3 C2 C1
SIGNAL GND SIGNAL OUTPUT RG-174/U(BLACK) POWER SUPPLY GND AWG22 (BLACK)
PMT
SOCKET PIN No. 10 SIGNAL OUTPUT (A) GND (G) R10 C3 C2 C1
32.00.5
26.00.2
P
DY9 26.00.2 32.00.5 TOP VIEW DY7 DY6 14.00.5 DY5 DY4 DY3 DY2 0.7 DY1 K DY8
9 R9 8 R8 7 R7 6 R6 5 R5 4 R4 3 R3 2 R2 1 R1 11 -HV (K) R1 to R10 : 330 k C1 to C3 : 10 nF
38.0 0.3 49.0 0.3 29.0 0.3 4
DY6 DY5
6 R6 5 R5 4 R4 3 R3 2 R2 1 R1 11
R1 to R10 : 330 k C1 to C3 : 10 nF
0.7
7
2
A G
30.0 +0 -1
31.0 0.5 HOUSING (INSULATOR)
DY4 DY3 DY2
2.7
22.40.2 SIDE VIEW
K
450 10
POTTING COMPOUND
DY1 K
10
-HV AWG22 (VIOLET)
30
R13
4- 2.8 * "Wiring diagram applies when -HV is supplied." To supply +HV,connect the pin "G" to +HV, and the pin "K" to the GND.
BOTTOM VIEW
TACCA0002EH TACCA0277EA
* Hamamatsu also provides C4900 series compact high voltage power supplies and C6270 series DP type socket assemblies which incorporate a DC to DC converter type high voltage power supply.
Warning-Personal Safety Hazards Electrical Shock-Operating voltages applied to this device present a shock hazard.
WEB SITE www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Electron Tube Division 314-5, Shimokanzo, Iwata City, Shizuoka Pref., 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: usa@hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: info@hamamatsu.de France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: infos@hamamatsu.fr United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: 44-(0)1707-294888, Fax: 44(0)1707-325777 E-mail: info@hamamatsu.co.uk North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: info@hamamatsu.se TPMS1014E02 Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: info@hamamatsu.it
JAN. 2007. IP

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